Addressing the Challenges in EUV Lithography by Simulation

Overview
EUV lithography is considered the most viable solution for printing the critical features related to the 22nm technology node. Although the exposure wavelength of 13.5nm is in the same range as the pattern to be printed, a complete new set of challenges need to be addressed, as compared to classical optical lithography applications. Given the recent encouraging technical progress of EUV technology, it becomes increasingly necessary for all potential EUV users to understand the origin of the sources of resist CD variations that are unique to EUV. Only a clear understanding of the physical origin of the variations will make it possible to develop strategies in process development, design and OPC to compensate for such variations.

This webcast will show how rigorous simulation of the EUV imaging process can be used to accurately predict the magnitude of process variations and the impact on critical dimensions and process windows. Effects introduced by the non-telecentric illumination, the reflective mask geometries, multi-layer defects, and flare are analyzed using the EUV module of Synopsys’ Sentaurus Lithography.

The engineering challenges associated with the EUV process, limited access to first-generation exposure and processing equipment, and the high cost involved in running experiments, make lithography simulation a perfect tool to support process, equipment, and material development.

Who Should Attend?
Process engineers working in EUV lithography process development, photomask engineers working on EUV masks, and lithography equipment engineers working on the development and evaluation of exposure tools.

Registration is free

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